منابع مشابه
Electrical transport properties of Si-doped hexagonal boron nitride epilayers
The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ∼12 · cm,...
متن کاملIron oxide doped boron nitride nanotubes: structural and magnetic properties.
A first-principles formalism is employed to investigate the interaction of iron oxide (FeO) with a boron nitride (BN) nanotube. The stable structure of the FeO-nanotube has Fe atoms binding N atoms, with bond length of roughly ~2.1 Å, and binding between O and B atoms, with bond length of 1.55 Å. In case of small FeO concentrations, the total magnetic moment is (4 μ(Bohr)) times the number of F...
متن کاملNested boron nitride and carbon-boron nitride nanocones
In this letter we extend previously established results for nested carbon nanocones to both nested boron nitride and carbon-boron nitride nanocones. Based purely on mechanical principles and classical mathematical modelling techniques, we determine the energetically favourable structures for nested boron nitride and carbon-boron nitride nanocones. While only three apex angles for boron nitride ...
متن کاملEffect of electric field on the band structure of graphene/boron nitride and boron nitride/boron nitride bilayers
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متن کاملBoron Nitride Nanomesh
4. A. M. Morales, C. M. Lieber, Science 279, 208 (1998). 5. L. Manna, E. C. Scher, A. P. Alivisatos, J. Am. Chem. Soc. 122, 12700 (2000). 6. Y. Xia et al., Adv. Mater. 15, 353 (2003). 7. J. N. Cha, G. D. Stucky, D. E. Morse, T. J. Deming, Nature 403, 289 (2000). 8. J. D. Hartgerink, E. Beniash, S. I. Stupp, Science 294, 1684 (2001). 9. T. Douglas, M. Young, Nature 393, 152 (1998). 10. E. Dujard...
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ژورنال
عنوان ژورنال: Defence Technology
سال: 2016
ISSN: 2214-9147
DOI: 10.1016/j.dt.2015.10.001